2SC4375SQ datasheet(1/2 Pages) PJSEMI

부품명	2SC4375SQ

상세설명	NPN Transistor

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제조업체	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

홈페이지	http://www.pingjingsemi.com/MainEn/Main.aspx

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Absolute Maximum Ratings (Ta = 25℃)

Parameter

Symbol

Value

Unit

Collector Base Voltage

VCBO

30

V

Collector Emitter Voltage

VCEO

30

V

Emitter Base Voltage

VEBO

5

V

Collector Current - DC

IC

1.5

A

Collector Power Dissipation

PC

0.5

W

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

- 55 to + 150

℃

Characteristics at Ta = 25℃

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at VCE = 2 V, IC = 500 mA

Current Gain Group

hFE

100

160

-

200

320

-

Collector Base Cutoff Current

at VCB = 30 V

ICBO

-

100

nA

Emitter Base Cutoff Current

at VEB = 5 V

IEBO

-

100

nA

Collector Base Breakdown Voltage

at IC = 1 mA

V(BR)CBO

30

-

V

Collector Emitter Breakdown Voltage

at IC = 10 mA

V(BR)CEO

30

-

V

Emitter Base Breakdown Voltage

at IE = 1 mA

V(BR)EBO

5

-

V

Collector Emitter Saturation Voltage

at IC = 1.5 A, IB = 30 mA

VCE(sat)

-

2

V

Transition Frequency

at VCE = 2 V, IC =500 mA

fT

-

120

-

MHz

Output Capacitance

at VCB = 10 V, IE = 0, f = 1 MHz

Cob

-

40

pF

2SC4375SQ

NPN Transistor

SOT-89

1. Base 2. Collector 3.Emitter

Marking: O:GO

Y:GY

1 /

2

www.pingjingsemi.com

Revison：1.0 Jan-2019

Features

⚫

Low collector saturation voltage

⚫

Excellent hFE characteristics

O

Y

Base Emitter Voltage

at VCE = 2 V, IC =500 mA

VBE

-

1

V

-

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2SC4375SQ 데이터시트(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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