BC868 datasheet(2/3 Pages) PJSEMI

부품명	BC868

상세설명	NPN Transistor

PDF	3 Pages

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제조업체	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

홈페이지	http://www.pingjingsemi.com/MainEn/Main.aspx

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2 / 3 page

BC868

NPN Transistor

2 / 3

www.pingjingsemi.com

Revison：1.0 Feb-2019

Electrical Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified.

Parameter

Symbol

Min.

Typ.

Max.

100

160

250

Collector Base Cutoff Current

at VCB = 25 V

ICBO

0.1

μA

Emitter Base Cutoff Current

at VEB = 5 V

IEBO

0.1

μA

Collector Base Breakdown Voltage

at IC = 100 μA

V(BR)CBO

Collector Emitter Breakdown Voltage

at IC = 1 mA

V(BR)CEO

Emitter Base Breakdown Voltage

at IE = 100 μA

V(BR)EBO

Collector Emitter Saturation Voltage

at IC = 1 A, IB = 100 mA

VCE(sat)

0.5

Transition Frequency

at VCE = 5 V, IC = 10 mA, f = 100MHz

MHz

Base Emitter Voltage

at VCE = 10 V, IC = 5 mA

at VCE = 1 V, IC = 1 A

VBE

0.62

DC Current Gain

at VCE = 1 V, IC = 500 mA

HFE

Current Gain Group -10

-16

-25

160

375

at VCE = 1 V, IC = 1 A

at VCE = 10 V, IC = 5 mA

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