| 전자부품 데이터시트 검색엔진 |
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FCX593 데이터시트(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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FCX593 데이터시트(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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2 / 4 page ![]() 2 / 4 www.pingjingsemi.com Revison:1.0 Apr - 2019 Parameter Symbol Min. Typ. Max. Units hFE 100 - - - 100 - - - 100 - 300 - 50 - - - Collector Base Cutoff Current at -VCB = 100 V -ICBO - - 0.1 μA Emitter Base Cutoff Current at -VEB = 4 V -IEBO - - 0.1 μA Collector Base Breakdown Voltage at -IC = 100 µA -V(BR)CBO 120 - - V Collector Emitter Breakdown Voltage at -IC = 10 mA -V(BR)CEO 100 - - V Emitter Base Breakdown Voltage at -IE = 100 µA -V(BR)EBO 5 - - V Collector Emitter Saturation Voltage at -IC = 250 mA, -IB = 25 mA at -IC = 500 mA, -IB = 50 mA -VCE(sat) - - 0.2 V Base Emitter Voltage at -VCE = 5 V, -IC = 1 mA -VBE - - 1 V Transition Frequency at -VCE = 10 V, -IC = 50 mA, f = 100 MHz fT 50 - - MHz Electrical Characteristics (Ta=25℃ unless otherwise specified) DC Current Gain at -VCE = 5 V, -IC = 1 mA at -VCE = 5 V, -IC = 250 mA at -VCE = 5 V, -IC = 500 mA at -VCE = 5 V, -IC = 1 A Base Emitter Saturation Voltage at -IC = 500 mA, -IB = 50 mA -VBE(sat) - - 1.1 V - - 0.3 FCX593 PNP Transistor Output Capacitance at -VCB = 10 V, - f = 1 MHz Cob - - 5 pF |
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