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1SS355 데이터시트(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1SS355 데이터시트(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1 / 3 page  ` 1SS355 Silicon Epitaxial Planar Switching Diode 1 / 3 www.pingjingsemi.com Revis ion：1.0 Oct-2017 Fe atures Small plastic package suitable for surface mounted design High reliability with high surge current handling capability Absolute Maximum Ratings ( Ta =25℃ ) Parameter Symbol Value Unit Peak Reverse Voltage VRM 90 V Reverse Voltage VR 80 V Average Rectified Forward Current IF(AV) 100 mA Peak Forward Current IFM 225 mA Surge Forward Current (1 s) IFSM 500 mA Junction Temperature TJ 150 O C Storage Temperature Range TSTG - 55 to + 150 O C Electrical Characteristics（ Ta =25℃） Parameter Symbol Max. Unit Forward Voltage at IF = 100 mA VF 1.2 V Reverse Current at VR = 80 V IR 0.1 µA Capacitance between Terminals at VR = 0.5 V, f = 1 MHz CT 3 pF Reverse Recovery Time at VR = 6 V, IF = 10 mA, RL = 100 Ω trr 4 ns SOD-323 1Cathode 2Anode 1 2 Marking : W2 |
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