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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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BAS16WS 데이터시트(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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BAS16WS 데이터시트(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1 / 3 page  BAS16WS Silicon Epitaxial Planar Switching Diode 1 / 3 www.pingjingsemi.com Revis ion：1.0 Oct-2017 Fe atures For surface mount application Fast switching diode SOD-323 1Cathode 2Anode Mark : W2 Absolute Maximum Ratings (Ta=25℃) Parameter Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V Forward Current (Continuous) IF 250 mA Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 ms at t = 1 μs IFSM 0.5 1 2 A Power Dissipation Ptot 200 mW Junction Temperature TJ 150 O C Storage Temperature Range TSTG - 65 to + 150 O C Electrical Characteristics (Ta=25℃) Parameter Symbol Max. Unit Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA VF 0.715 0.855 1 1.25 V Reverse Leakage Current at VR = 75 V at VR = 25 V, TJ = 150℃ at VR = 75 V, TJ = 150℃ I 1 30 50 µA Diode Capacitance at VR = 0 V, f = 1 MHz Ctot 2 pF Reverse Recovery Time at IF = 10 mA to IR = 10 mA, IR = 1 mA, RL = 100 Ω trr 6 ns 1 2 W2 |
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