| 전자부품 데이터시트 검색엔진 |
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BAV19W 데이터시트(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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BAV19W 데이터시트(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1 / 3 page ![]() BAV19W thru BAV21W Silicon Epitaxial Planar Diodes 1 / 3 www.pingjingsemi.com Revis ion:1.0 Oct-2017 Features Fast switching speed Surface mount package ideally suited for automatic insertion SOD-123 1 1Cathode 2Anode 1 2 Absolute Maximum Ratings (Ta=25℃) Parameter Symbol Value Unit Repetitive Peak Reverse Voltage BAV19W BAV20W BAV21W VRRM 120 200 250 V Reverse Voltage BAV19W BAV20W BAV21W VR 100 150 200 V Average Rectified Forward Current IF(AV) 200 mA Forward Continuous Current IFM 400 mA Repetitive Peak Forward Current IFRM 625 mA Non-repetitive Peak Forward Surge Current at t = 1 ms at t = 1 s IFSM 2.5 0.5 A Power Dissipation Pd 250 mW Operating and Storage Temperature Range TJ, TSTG - 65 to + 150 ℃ Characteristics (Ta=25℃) Parameter Symbol Min. Max. Unit Forward Voltage at IF = 100 mA at IF = 200 mA VF - - 1 1.25 V Reverse Breakdown Voltage at IR = 100 µA BAV19W BAV20W BAV21W V(BR)R 120 200 250 - - - V Reverse Current at VR = 100 V BAV19W at VR = 150 V BAV20W at VR = 200 V BAV21W IR - - - 100 100 100 nA Total Capacitance at VR = 0 , f = 1 MHz CT - 5 pF Reverse Recovery Time at IF = IR = 30 mA, Irr = 0.1IR, RL = 100 Ω trr - 50 ns Marking : JX |
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