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MMBD4148 데이터시트(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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MMBD4148 데이터시트(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1 / 3 page ![]() MMBD4148 Silicon Epitaxial Planar Switching Diode 1 / 3 www.pingjingsemi.com Revis ion:2.0 Aug-2018 Fe atures MMBD4148 Marking Code: 5D MMBD4148SE Marking Code: A7 MMBD4148CC Marking Code: A 3 MMBD4148CA Marking Code: A1 Absolute Maximum Ratings (Ta=25℃ ) Parameter Symbol Value Unit Maximum Repetitive Reverse Voltage VRRM 100 V Reverse Voltage VR 75 V Average Rectified Forward Current IF(AV) 200 mA DC Forward Current IFM 600 mA Recurrent Peak Forward Current IFRM 700 mA Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 μs IFSM 1 4 A Total Device Dissipation Ptot 350 mW Operating Junction Temperature TJ 150 ℃ Storage Temperature Range TSTG - 55 to + 150 ℃ Characteristics (Ta=25℃ ) Parameter Symbol Min. Max. Unit Forward Voltage at IF = 10 mA VF - 0.85 V Reverse Breakdown Voltage at IR = 100 µA at IR = 5 µA V(BR)R 100 75 - - V Reverse Current at VR = 20 V at VR = 75 V at VR = 20 V, Ta = 150 OC IR - - - 25 1 50 nA µA µA Reverse Recovery Time at IF = 10 mA, VR = 6 V, IRR = 1 mA, RL = 100 Ω trr - 4 ns Total Capacitance at VR = 0 V, f = 1 MHz CT - 4 pF 1 3 2 3 1 2 1 3 2 2 1 3 4148 4148SE 4148CC 4148CA SOT-23 1 2 3 |
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