| 전자부품 데이터시트 검색엔진 |
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AS7C251MPFS18A 데이터시트(PDF) 6 Page - Alliance Semiconductor Corporation |
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AS7C251MPFS18A 데이터시트(HTML) 6 Page - Alliance Semiconductor Corporation |
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6 / 19 page ![]() ® AS7C251MPFS18A 12/23/04, v. 2.2 Alliance Semiconductor 6 of 19 Write enable truth table (per byte) Key: X = don’t care; L = low; H = high; BWE, BWn = internal write signal Asynchronous Truth Table Notes: 1. X means “Don’t Care” 2. ZZ pin is pulled down internally 3. For write cycles that follows read cycles, the output buffers must be disabled with OE, otherwise data bus contention will occur. 4. Snooze mode means power down state of which stand-by current does not depend on cycle times 5. Deselected means power down state of which stand-by current depends on cycle times Burst sequence table Function GWE BWE BWa BWb Write all bytes (a, b) LX X X H LLL Write byte a H L L H Write byte b H L H L Read HHX X HL H H Operation ZZ OE I/O Status Snooze mode H X High-Z Read LL Dout LH High-Z Write L X Din, High-Z Deselected L X High-Z Interleaved burst address (LBO = 1) Linear burst address (LBO = 0) A1 A0 A1 A0 A1 A0 A1 A0 A1 A0 A1 A0 A1 A0 A1 A0 Starting Address 0 0 0 1 1 0 1 1 Starting Address 0 0 0 1 1 0 1 1 First Increment 0 1 0 0 1 1 1 0 First Increment 0 1 1 0 1 1 0 0 Second Increment 1 0 1 1 0 0 0 1 Second Increment 1 0 1 1 0 0 0 1 Third Increment 1 1 1 0 0 1 0 0 Third Increment 1 1 1 0 0 1 1 0 |
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