F8NE65 datasheet(1/11 Pages) WXDH

부품명	F8NE65

상세설명	7.5A 650V N-channel Enhancement Mode Power MOSFET

PDF	11 Pages

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제조업체	WXDH [Jiangsu Donghai Semiconductor Technology Co.,Ltd]

홈페이지	http://www.jswxdh.cn

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1 / 11 page

ROUM Semiconductor Technology CO.,LTD.

Rev. 1.0

www.roum.cn

Page 1 of 11

8NE65

1

Description

These N-channel Enhanced VDMOSFETs, is obtained by the

self-aligned planar technology which reduce the conduction loss,

improve switching performance and enhance the avalanche

energy. Which accords with the RoHS standard.

2

Features

● Fast Switching

● ESD Improved Capability

● Low ON Resistance(Rdson≤1.4Ω)

● Low Gate Charge(Typical Data:24nC)

● Low Reverse Transfer Capacitances(Typical:5.5pF)

● 100% Single Pulse Avalanche Energy Test

● 100% ΔV

DS Test

3

Applications

● Used in Various Power Switching Circuit for System

Miniaturization and Higher Efficiency.

● Power Switch Circuit of Electron Ballast and Adaptor.

7.5A 650V N-channel Enhancement Mode Power MOSFET

4

Electrical Characteristics

4.1 Absolute Maximum Rating (Tc=25℃,unless otherwise noted)

PARAMETER

SYMBOL

VALUE

UNIT

Maximum Drian-Source DC Voltage

VDS

650

V

Maximum Gate-Drain Voltage

VGS

±30

V

Drain Current(continuous)

ID（T=25℃）

（T=100℃）

7.5

A

4.8

A

Drain Current(Pulsed)

(Note 1)

IDM

30

A

Single Pulse Avalanche Energy

(Note 5)

EAS

350

mJ

Peak Diode Recovery dv/dt

(Note 6)

dv/dt

5

V/ns

Total Dissipation

Ta=25℃

Ptot

2

W

TC=25℃

Ptot

100

W

Junction Temperature

Tj

150

℃

Storage Temperature

Tstg

-55～150

℃

Maximum Temperature for Soldering

TL

300

℃

4.2 Thermal Characteristics

PARAMETER

SYMBOL

VALUE

UNIT

Thermal Resistance Junction to Case-sink

RthJC

1.25

℃/W

Thermal Resistance Junction to Ambient

RthJA

62.5

℃/W

VDSS = 650V

RDS(on) （TYP)= 1.2Ω

ID = 7.5A

TO-220C

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