I8N80 datasheet(1/10 Pages) WXDH

부품명	I8N80

상세설명	8A 800V N-channel Enhancement Mode Power MOSFET

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제조업체	WXDH [Jiangsu Donghai Semiconductor Technology Co.,Ltd]

홈페이지	http://www.jswxdh.cn

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ROUM Semiconductor Technology CO.,LTD.

Rev. 1.0

www.roum.cn

Page 1 of 10

8N80

1

Description

These

silicon

N-channel

Enhanced

VDMOSFETs,

is

obtained by the self-aligned planar Technology which

reduce the conduction loss, improve switching performance

and enhance the avalanche energy. Thetransistor can be

used

in

various

power

switching

circuit

forsystem

miniaturization and higher efficiency.Which accords with the

RoHS standard.

2

Features

● Low Gate Charge

● ESD Improved

● Fast Switching

● Low ON Resistance

● 100% Single Pulse Avalanche Energy Test

● 100% Δ

VDS Test

3

Applications

● Electronic Ballast

● ATX Power

● High Voltage H Bridge PWM Motor Drive

8A 800V N-channel Enhancement Mode Power MOSFET

4

Electrical Characteristics

4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted)

PARAMETER

SYMBOL

VALUE

UNIT

Drian-Source Voltage

VDS

800

V

Gate-Drain Voltage

VGS

±30

V

Drain Current(continuous)

ID（T=25℃）

（T=100℃）

8

A

5.4

A

Drain Current(Pulsed)

(Note 1)

IDM

32

A

Single Pulse Avalanche Energy

(Note 5)

EAS

350

mJ

Avalanche Energy Repetitive

(Note 1)

EAR

55

mJ

Avalanche Current

(Note 1)

IAR

3.3

A

Peak Diode Recovery dv/dt

(Note 6)

dv/dt

5

V/ns

Total Dissipation

Ta=25℃

Ptot

2

W

TC=25℃

Ptot

120

W

Junction Temperature

Tj

150

℃

storage Temperature

Tstg

-55～150

℃

Maximum Temperature for soldering

TL

300

℃

4.2 Thermal Characteristics

PARAMETER

SYMBOL

VALUE

UNIT

Thermal Resistance Junction to Case-sink

RthJC

1.04

℃/W

Thermal Resistance Junction to Ambient

RthJA

62.5

℃/W

VDSS = 800V

RDS(on) （TYP)= 1.1Ω

ID = 8A

TO-220C

1

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4

5

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유사한 부품 번호 - I8N80

제조업체	부품명	데이터시트	상세설명
Jiangsu Donghai Semicon...	I8N80	779Kb / 10P	8A 800V N-channel Enhancement Mode Power MOSFET
	I8N80	779Kb / 10P	8A 800V N-channel Enhancement Mode Power MOSFET
	I8N80	779Kb / 10P	8A 800V N-channel Enhancement Mode Power MOSFET

More results

유사한 설명 - I8N80

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Pan Jit International I...	PJP1N80	227Kb / 6P	800V N-Channel Enhancement Mode MOSFET
Jiangsu Donghai Semicon...	8N60	879Kb / 12P	8A 600V N-channel Enhancement Mode Power MOSFET
	E8N80	779Kb / 10P	8A 800V N-channel Enhancement Mode Power MOSFET
	7N80	901Kb / 11P	7A 800V N-channel Enhancement Mode Power MOSFET
	E7N80	900Kb / 11P	7A 800V N-channel Enhancement Mode Power MOSFET
	F7N80	900Kb / 11P	7A 800V N-channel Enhancement Mode Power MOSFET
	F8N60	879Kb / 12P	8A 600V N-channel Enhancement Mode Power MOSFET
	F8N80	779Kb / 10P	8A 800V N-channel Enhancement Mode Power MOSFET
	I7N80	899Kb / 11P	7A 800V N-channel Enhancement Mode Power MOSFET
	I8N80	779Kb / 10P	8A 800V N-channel Enhancement Mode Power MOSFET

More results

I8N80 데이터시트(PDF) 1 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd

I8N80 데이터시트(HTML) 1 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd

유사한 부품 번호 - I8N80

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