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LP1130B 데이터시트(PDF) 4 Page - Lowpower Semiconductor inc

부품명 LP1130B
상세설명  Half-Bridge IPM
PDF  5 Pages
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제조업체  POWER [Lowpower Semiconductor inc]
홈페이지  http://www.lowpowersemi.com
Logo POWER - Lowpower Semiconductor inc

LP1130B 데이터시트(HTML) 4 Page - Lowpower Semiconductor inc

  LP1130B Datasheet HTML 1Page - Lowpower Semiconductor inc LP1130B Datasheet HTML 2Page - Lowpower Semiconductor inc LP1130B Datasheet HTML 3Page - Lowpower Semiconductor inc LP1130B Datasheet HTML 4Page - Lowpower Semiconductor inc LP1130B Datasheet HTML 5Page - Lowpower Semiconductor inc  
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LP1130B-00
Apr.-2018
Email: marketing@lowpowersemi.com
www.lowpowersemi.com
Page 4 of 5
Preliminary Datasheet
LP1130B
Electrical Characteristics
(TA=25°C, unless otherwise noted.)
Characteristic
Symbol
Condition
Min
Typ
Max
Unit
Supply
Supply Voltage Range
VCC
−
4.6
−
13.2
V
Supply Current
ISYS
VBST=12V, VEN=0V
−
0.7
−
mA
EN Input
Input Voltage High
VEN_HI
−
2.0
−
−
V
Input Voltage Low
VEN_LO
−
−
−
0.8
V
Hysteresis
VEN_HYS
−
−
300
−
mV
Input Current
IEN
No internal pull-up or pull-down resistors
−1.0
−
+1.0
μA
PWM Input
Input Voltage High
VPWM_HI
−
2.0
−
−
V
Input Voltage Low
VPWM_LO
−
−
−
0.8
V
Hysteresis
VPWM-HYS
−
−
300
−
mV
Input Current
IPWM
No internal pull-up or pull-down resistors
−1.0
−
+1.0
μA
Under Voltage Lockout
UVLO Startup
VUVLO
−
-
4.3
-
V
Hysteresis
VUVLO-HYS
−
-
0.3
-
V
POWER MOSFET
Zero Gate Voltage Drain Current
IDSS
VIN=30V, EN=0
1
μA
High side switch On-Resistance
RDS(ON)-H
VCC=9V
10
mΩ
Low side switch On-Resistance
RDS(ON)-L
10
THERMAL SHUTDOW N
Thermal shutdown threshold
TSD
160
℃
Thermal shutdown threshold hysteresis
TSD-HYS
30
℃



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