전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

Preview PDF HTML

WSC15N10 데이터시트(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

부품명 WSC15N10
상세설명  N-Ch MOSFET
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
홈페이지  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSC15N10 데이터시트(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WSC15N10 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSC15N10 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSC15N10 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSC15N10 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSC15N10 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
100
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.098
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V , ID=
5A
---
80
1
00
m
Ω
VGS=4.5V , ID=
2A
---
115
130
m
Ω
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.5
2.0
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-4.57
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=80V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=80V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=
5A
---
13
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
2
4
Ω
Qg
Total Gate Charge (10V)
VDS=
50V , VGS=10V , ID=5A
12
21
30
nC
Qgs
Gate-Source Charge
3.4
4.9
6.4
Qgd
Gate-Drain Charge
2.9
5.8
8.7
Td(on)
Turn-On Delay Time
VDD=
30V , VGS=10V , RG=6Ω
ID=1A
, RL=30Ω
---
13
24
ns
Tr
Rise Time
---
10
19
Td(off)
Turn-Off Delay Time
---
32
60
Tf
Fall Time
---
16
30
Ciss
Input Capacitance
VDS=
30V , VGS=0V , f=1MHz
940
pF
Coss
Output Capacitance
80
Crss
Reverse Transfer Capacitance
50
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
VDD=25V , L=0.
5mH , IAS=6A
25
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
VG=VD=0V , Force Current
---
---
5
A
ISM
Pulsed Source Current
2,6
---
---
64
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=
5A , TJ=25℃
---
---
1.
1
V
trr
Reverse Recovery Time
IF=
5A , dI/dt=100A/µs , TJ=25℃
33
47
61
nS
Qrr
Reverse Recovery Charge
61
87
113
nC
Diode Characteristics
Guaranteed Avalanche Characteristics
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper
,t≦10sec.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.
5mH,IAS=6A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
N-Ch MOSFET
Page 2
www.winsok.tw
Dec.2014
WSC15N10
---
---
---
---
---
---



Html Pages

1 2 3 4 5


데이터시트 다운로드

Go To PDF Page


링크 URL



ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크 투 데이터시트    |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com