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IS25LP032D-RBLA3 데이터시트(PDF) 107 Page - Integrated Silicon Solution, Inc |
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IS25LP032D-RBLA3 데이터시트(HTML) 107 Page - Integrated Silicon Solution, Inc |
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107 / 118 page ![]() IS25LP032D IS25WP032D Integrated Silicon Solution, Inc.- www.issi.com 107 Rev. A12 08/04/2020 9.9 PROGRAM/ERASE PERFORMANCE Parameter Typ Max Unit Sector Erase Time (4Kbyte) 70 300 ms Block Erase Time (32Kbyte) 0.1 0.5 s Block Erase Time (64Kbyte) 0.15 1.0 s Chip Erase Time (32Mb) 8 24 Page Programming Time 0.2 0.8 ms Byte Program 8 40 µs Note: These parameters are characterized and not 100% tested. 9.10 RELIABILITY CHARACTERISTICS Parameter Min Max Unit Test Method Endurance 100,000 - Cycles JEDEC Standard A117 Data Retention 20 - Years JEDEC Standard A117 Latch-Up -100 +100 mA JEDEC Standard 78 Note: These parameters are characterized and not 100% tested. |
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