| 전자부품 데이터시트 검색엔진 |
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WSF80N06 데이터시트(PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSF80N06 데이터시트(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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1 / 6 page ![]() Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ± 20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 80 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 43 A IDM Pulsed Drain Current 270 A PD@TC=25℃ Total Power Dissipation 104 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-Ambient --- 62.5 ℃ /W RθJC Thermal Resistance Junction-Case --- 1.2 ℃ /W BVDSS RDSON ID 60V 7.2mΩ 80A General Description Applications Consumer electronic power supply Motor control Synchronous-rectification Isolated DC Synchronous-rectification applications Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Thermal Data TO-252 Pin Configuration Product Summery WSF80N06 use advanced VD MOST technology to provide low RDS(ON), low gate charge, fast switching This device is specially designed to get better ruggedness and suitable to use in Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity or Invertors N-Ch MOSFET WSF80N06 Page 1 www.winsok.tw Dec.2014 |
유사한 부품 번호 - WSF80N06 |
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유사한 설명 - WSF80N06 |
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