FUSB303B

www.onsemi.com

8

Table 6. DC AND TRANSIENT CHARACTERISTICS

otherwise specified.)

Symbol

Parameter

Unit

Min.

Typ.

Max

TYPE C SPECIFIC PARAMETERS

Source 80 mA CC Current (Default) HOST_CUR1 = 0, HOST_CUR0 = 1 or

via GPIO mode

64

80

96

mA

Source 180 mA CC Current (1.5 A) HOST_CUR1 = 1, HOST_CUR0 = 0 or

via GPIO mode

166

180

194

mA

Source 330 mA CC Current (3 A) HOST_CUR1 = 1, HOST_CUR0 = 1 or via

GPIO mode (Note 3)

304

330

356

mA

Sink Pull−Down Voltage in Dead Battery Under all Pull−up Source Loads

2.18

V

Rd

Sink Pull−Down Resistance when VDD is within Operating Range

4.6

5.1

5.6

kW

zOPEN

CC Resistance for Disabled State

126

kW

vRa−SRCdef

Ra Detection Threshold for CC Pin for Source for Default Current on VBUS

(HOST_CUR1/0 = 01) or via GPIO mode

0.15

0.20

0.25

V

vRa−SRC1.5A

Ra Detection Threshold for CC Pin for Source for 1.5 A Current on VBUS

(HOST_CUR1/0 = 10) or via GPIO mode

0.35

0.40

0.45

V

vRa−SRC3A

Ra Detection Threshold for CC Pin for Source for 3 A Current on VBUS

(HOST_CUR1/0 = 11) or via GPIO mode

0.75

0.80

0.85

V

vRd−SRCdef

Rd Detection Threshold for Source for Default Current

(HOST_CUR1/0 = 01) or via GPIO mode

1.50

1.60

1.65

V

vRd−SRC1.5A

Rd Detection Threshold for Source for 1.5 A Current (HOST_CUR1/0 = 10)

or via GPIO mode

1.50

1.60

1.65

V

vRd−SRC3A

Rd Detection Threshold for Source for 3 A Current (HOST_CUR1/0 = 11) or

via GPIO mode (Note 3)

2.45

2.60

2.75

V

vRa−SNK

Ra Detection Threshold for CC Pin for Sink

0.15

0.20

0.25

V

vRd−def

Rd Default Current Detection Threshold for Sink

0.61

0.66

0.70

V

vRd−1.5A

Rd 1.5 A Current Detection Threshold for Sink

1.16

1.23

1.31

V

vRd−3.0A

Rd 3 A Current Detection Threshold for Sink

2.04

2.11

2.18

V

vVBUSthr

VBUS_DET Threshold when VBUSOK is deasserted

2.9

3.3

3.67

V

tVBUSdeb

VBUS_DET debounce time before VBUSOK is deasserted only

(see tDeb below for VBUSOK being asserted)

10

20

ms

vVBthLH

VBUS_DET Threshold when VBUSOK is asserted

3.67

4.07

4.48

V

tDeb

VBUS_DET debounce time before VBUSOK is asserted

250

500

ms

vVSAFEthr

vSafe0V VBUS_DET Threshold

0.8

V

vVSAFEthrhys

VSAFE0V VBUS_DET Threshold hysteresis

50

mV

rVBUSleak

Leakage between VBUS and GND when VBUS not sourced

72.4

kW

rVBUSdschg

Effective resistance from VBUS and GND when VBUS is being discharged

from vSafe5V

2

kW

rPullup

Pull up resistor to VDD value on EN_N pin

6

MW

vAUTOSNKthr

Weak Battery VDD Threshold

−3%

AUTO

SNK_T

H

+3%

V

Ra

Resistor for discharging VCONN

1

kΩ

3. VDD = 3 V when 3 A current advertised.