WSP6956 datasheet(2/7 Pages) WIINSOK

2 / 7 page

Page 2

www.winsok.tw

Dec.2014

WSP6956

Dual N-Ch MOSFET

Note d：Pulse test ; pulse width£300ms, duty cycle£2%.

Note e：Guaranteed by design, not subject to production testing.

Electrical Characteristics (T = 25C unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Static Characteristics

DSS

Drain-Source Breakdown Voltage

VGS=0V, IDS=250A

DSS

Zero Gate Voltage Drain Current

VDS=48V, VGS=0V

A

TJ=85°C

GS( th)

Gate Threshold Voltage

VDS=VGS, IDS=250A

1.5

2.5

GSS

Gate Leakage Current

VGS=±20V, VDS=0V

±100

RDS(ON)

Drain-Source On-state Resistance

VGS=10V, IDS=10A

VGS=4.5V, IDS=9A

Diode Characteristics

VSD

Diode Forward Voltage

ISD=10A, VGS=0V

0.8

1.3

trr

Reverse Recovery Time

ISD=10A, dlSD/dt=100A/s

Reverse Recovery Charge

Dynamic Characteristics

Gate Resistance

VGS=0V,VDS=0V,f=1MHz

2.5

iss

Input Capacitance

VGS=0V,

VDS=30V,

Frequency=1.0MHz

1370 1780

oss

Output Capacitance

135

rss

Reverse Transfer Capacitance

d(ON)

Turn-on Delay Time

Turn-on Rise Time

d(OFF)

Turn-off Delay Time

Turn-off Fall Time

Gate Charge Characteristics

Total Gate Charge

VDS=30V, VGS=4.5V,

IDS=10A

Total Gate Charge

VDS=30V, VGS=10V,

IDS=10A

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDD=30V, RL=30W,

IDS=1A, VGEN=10V,

RG=6W

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