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WSP8212 데이터시트(PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

부품명 WSP8212
상세설명  Dual N-Channel MOSFET
PDF  5 Pages
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제조업체  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
홈페이지  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSP8212 데이터시트(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WSP8212 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSP8212 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSP8212 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSP8212 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSP8212 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
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background image
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Sou
rce Voltage
±
12
V
ID@Tc=25℃
Continuous Drain Current, VGS @ 4.5V
1
11
A
ID@Tc=70℃
Continuous Drain Current, VGS @ 4.5V
1
9
A
IDM
Pulsed Drain Current
2
40
A
PD@TA=25℃
Total Power Dissipation
3
1.5
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Symbol
Parameter
Typ.
Max.
Unit
RθJA
Thermal Resistance Junction-ambient
1
---
100
℃
/W
RθJC
Thermal Resistance Junction-Case
1
---
70
℃
/W
BVDSS
RDSON
ID
20V
10mΩ
11A
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent Cdv/dt effect decline
Green Device Available
General Description
Features
Applications
High Frequency Point-of-Load Synchronous
Small power switching for MB/NB/UMPC/VGA
Networking DC-DC Power System
ESD:2KV
Absolute Maximum Ratings
Thermal Data
SOP
-8 Pin Configuration
Product Summery
WSP8212
Page 1
www.winsok.tw
Dec.2014
Dual N-Channel MOSFET
The WSP8212 is the highest performance
trench Dual N-ch MOSFET with extreme high
cell density , which provide excellent RDSON
and gate charge for most of the small power
switching and load switch applications.
The WSP8212 meet the RoHS and Green
Product requirement with full function reliability
approved.


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