MPC5673K datasheet(76/147 Pages) NXP

76 / 147 page

MPC5675K Microcontroller Data Sheet, Rev. 8.1

Electrical characteristics

NXP Semiconductors

Figure 7. PMU mandatory external components

3.9

Supply current characteristics

Table 18. VRC SMPS recommended external devices

Reference

designator

Part description

Part type

Nominal

Description

—

capacitor 20 µF, 20 V

Filter capacitor

—

capacitor 0.1 µF, 20 V

Filter capacitor

—

capacitor 20 µF, 20 V

Supply decoupling cap, ESR < 50 m

Ω,

as close to PMOS source as possible

—

capacitor 0.1 µF, 16 V

Ceramic

—

capacitor 20 µF, 16 V

Buck capacitor, total ESR < 100 m

Ω,

as close to the coil as possible

SS8P3L

Schottky

—

Vishay low Vf Schottky diode

—

inductor

4 µH, 1.5 A

Buck shielded coil low ESR

FDC642P or

SQ2301ES or

SI3443DV

pMOS

2 A, 10 V

Low threshold PMOS Vth < 1.5 V,

Rdson@4.5 V < 120 mΩ, Qg <16nC

—

resistor

50–100 k

Pullup for power PMOS gate

Table 19. Current consumption characteristics1

No.

Symbol

Parameter

Conditions

Min

Typ

Max Unit

1IDD_LV

CC Maximum run

IDD

(incl. digital core logic

and analog block of

the LV rail)

VDD_LV = 1.36 V, fCore = 180 MHz, 1:2

mode, DPM, both cores executing EMC test

code, internal VREG mode, all caches

enabled, code execution of core 0 from

code flash 0, code execution of core 1 from

code flash 1, FMPLL_1 active at 120 MHz.

—

600

900

2IDD_LV_PLL

CC Maximum run

IDD for

each PLL2

VDD_LV_PLL = 1.36 V, fVCO running at

maximum frequency.

—1.5

VDD_HV_PMU

VSS_HV_PMU

VREG_CTRL

VDD_LV_COR

VSS_LV_COR

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