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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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HFA200MD40C 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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HFA200MD40C 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 HFA200MD40C Ultrafast, Soft Recovery Diode FEATURES · Reduced RFI and EMI · Reduced Snubbing · Extensive Characterization of Recovery Parameters · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER CONDITIONS VALUE UNIT VR Repetitive Peak Reverse Voltage IR=100µA 400 V IF(AV) Average Forward Current TC=25℃ 172 A IFSM Surge Forward Current 1200 A PD Maximum Power Dissipation 278 W TJ Junction Temperature TC=25℃ -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case Per diode 0.45 ℃ /W Per module 0.23 |
유사한 부품 번호 - HFA200MD40C |
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유사한 설명 - HFA200MD40C |
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