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ISCND217P 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

부품명 ISCND217P
상세설명  isc Silicon NPN Power Transistors
PDF  2 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
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ISCND217P 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited

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1
isc Silicon NPN Power Transistors
ISCND217P
DESCRIPTION
·
DC Current Gain -hFE = 150(Min)@ IC= 0.8A
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for use in general purpose amplifer and switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
10
A
IB
Base Current
3
A
PC
Collector Power Dissipation
TC=25℃
65
W
Collector Power Dissipation
Ta=25℃
2
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.92
℃
/W


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