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MMBD4448SDW 데이터시트(PDF) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
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MMBD4448SDW 데이터시트(HTML) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
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1 / 3 page ![]() MMBD4448SDW SOT-363 1 / 3 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. Fast Switching Diode Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage VRM 100 V Reverse Voltage VR 80 V Average Rectified Forward Current IF(AV) 150 mA Forward Continuous Current IFM 300 mA Non-Repetitive Peak Forward Surge Current (at t = 1 µs) IFSM 0.5 A Power Dissipation Pd 200 mW Junction Temperature Tj 150 O C Storage Temperature Range Tstg - 65 to + 150 O C Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit Forward Voltage at IF = 5 mA at IF = 10 mA at IF = 100 mA at IF = 150 mA VF 0.62 - - - 0.72 0.855 1 1.25 V Reverse Leakage Current at VR = 80 V at VR = 20 V at VR = 75 V, TJ = 150 OC at VR = 25 V, TJ = 150 OC IR - - - - 100 25 50 30 nA nA µA µA Reverse Breakdown Voltage at IR = 100 µA V(BR)R 80 - V Total Capacitance at VR = 0.5 V, f = 1 MHz Ctot - 4 pF Reverse Recovery Time at IF = IR = 10 mA, Irr = 0.1 X IR , RL = 100 Ω trr - 4 ns 1 2 3 4 6 5 1. A1 2. C1 3. AC2 4. A2 5. C2 6. AC1 Silicon Epitaxial Planar Switching Diode Simplified outline(SOT-363) |
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