MPF4392 MPF4393

4

Motorola Small–Signal Transistors, FETs and Diodes Device Data

IDSS, ZERO–GATE VOLTAGE DRAIN CURRENT (mA)

20

10

30

40

50

30 40

50 60

70

20

0

10

0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

10

70

60

80

90

100

80 90 100 110 120 130 140 150

NOTE 2

The Zero–Gate–Voltage Drain Current (IDSS), is the principle

determinant of other J–FET characteristics. Figure 10 shows

the relationship of Gate–Source Off Voltage (VGS(off)) and

Drain–Source On Resistance (rds(on)) to IDSS. Most of the

devices will be within

±10% of the values shown in Figure 10.

This data will be useful in predicting the characteristic variations

for a given part number.

For example:

Unknown

rds(on) and VGS range for an MPF4392

The electrical characteristics table indicates that an MPF4392

has an IDSS range of 25 to 75 mA. Figure 10 shows rds(on) = 52

Ohms for IDSS = 25 mA and 30 Ohms for IDSS = 75 mA. The

corresponding VGS values are 2.2 volts and 4.8 volts.

Figure 10. Effect of IDSS On Drain–Source

Resistance and Gate–Source Voltage

Tchannel = 25°C

rDS(on) @ VGS = 0

VGS(off)