LP0701 datasheet(3/14 Pages) MICROCHIP

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AC ELECTRICAL CHARACTERISTICS

Electrical Specifications: TA = 25°C unless otherwise specified. Specification is obtained by characterization and is

not 100% tested.

Parameter

Sym.

Min.

Typ. Max.

Unit

Conditions

Forward Transconductance

GFS

500

700

—

mmho VGS = –15V, ID = –1A

Input Capacitance

CISS

—

120

250

VGS = 0V,

VDS = –15V,

f = 1 MHz

Common Source Output Capacitance

COSS

—

100

125

Reverse Transfer Capacitance

CRSS

—

Turn-On Delay Time

td(ON)

—

VDD = –15V,

ID = –1.25A,

RGEN = 25Ω

Rise Time

—

Turn-Off Delay Time

td(OFF)

—

Fall Time

—

DIODE PARAMETER

Diode Forward Voltage Drop

VSD

—

–1.2

–1.5

VGS = 0V, ISD = –500 mA

(Note 1)

Note 1: Unless otherwise stated, all DC parameters are 100% tested at 25°C. Pulse test: 300 µs pulse, 2% duty

cycle.

TEMPERATURE SPECIFICATIONS

Parameter

Sym.

Min.

Typ. Max. Unit

Conditions

TEMPERATURE RANGE

Operating Ambient Temperature

–55

—

+150

°C

Storage Temperature

–55

—

+150

°C

PACKAGE THERMAL RESISTANCE

3-lead TO-92

JA

—

132

—

°C/W

8-lead SOIC

JA

—

101

—

°C/W

Note 1

Note 1: Mounted on an FR4 board, 25 mm x 25 mm x 1.57 mm

THERMAL CHARACTERISTICS

Package

ID (Note 1)

(Continuous)

(mA)

(Pulsed)

(A)

Power Dissipation

at TA = 25°C

(W)

IDR (Note 1)

(mA)

IDRM

(mA)

3-lead TO-92

–500

–1.25

–500

–1.25

8-lead SOIC

–700

–1.25

1.5 (Note 2)

–700

–1.25

Note 1: ID (continuous) is limited by maximum rated TJ.

2: Mounted on an FR4 board 25 mm x 25 mm x 1.57 mm

 2018 Microchip Technology Inc.

DS20005447A-page 3

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