 2018 Microchip Technology Inc.

DS20005698A-page 1

TN2124

Features

• Free from Secondary Breakdown

• Low Power Drive Requirement

• Ease of Paralleling

• Excellent Thermal Stability

• Integral Source-Drain Diode

• High Input Impedance and High Gain

Applications

• Logic-Level Interfaces (Ideal for TTL and CMOS)

• Solid-State Relays

• Battery-Operated Systems

• Photovoltaic Drives

• Analog Switches

• General Purpose Line Drivers

• Telecommunication Switches

General Description

The

TN2124

low-threshold

Enhancement-mode

(normally-off) transistor uses a vertical Diffusion

Metal-Oxide Semiconductor (DMOS) structure and a

well-proven silicon gate manufacturing process. This

combination produces a device with the power

handling capabilities of bipolar transistors and the high

input impedance and positive temperature coefficient

inherent

in

Metal-Oxide

Semiconductor

(MOS)

devices. Characteristic of all MOS structures, this

device is free from thermal runaway and thermally

induced secondary breakdown.

Microchip’s vertical DMOS Field-Effect Transistors

(FETs) are ideally suited to a wide range of switching

and amplifying applications where very low threshold

voltage,

high

breakdown

voltage,

high

input

impedance, low input capacitance and fast switching

speeds are desired.

Package Type

3-lead SOT-23

(Top view)

See Table 3-1 for pin information.

DRAIN

SOURCE

GATE

N-Channel Enhancement-Mode Vertical DMOS FET