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INA848IDR 데이터시트(PDF) 21 Page - Texas Instruments

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부품명 INA848IDR
상세설명  INA848 Ultra-Low-Noise (1.5 nV/?숰z), High-Bandwidth Instrumentation Amplifier With Fixed Gain of 2000
PDF  33 Pages
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제조업체  TI [Texas Instruments]
홈페이지  http://www.ti.com
Logo TI - Texas Instruments

INA848IDR 데이터시트(HTML) 21 Page - Texas Instruments

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9.2.2.2 Noise Analysis
Low-noise instrumentation amplifiers such as the INA848 are designed to serve stringent and sensitive
applications, such as surgical tools, microphones or other precision monitoring systems. A througough noise
analysis is a key element in the design process.
TI`s super-beta transistors offer the benefits of low voltage noise and low current noise, thus allowing the INA848
excellent noise performance.
Figure 9-6 shows a simplified noise model including the gain stages of the INA848.
i
ni1
e
ni1
R
in
G1
200
e
nref
e
no1
G2
10
e
no
V
DIFF
V
REF
V
OUT
e
ni
Figure 9-6. Simplified Noise Model
To get the total input-referred noise, eni, consider the source resistance seen by the positive and negative input
pins of the instrumentation amplifier. The key elements that must be considered for a noise analysis in an
instrumenation amplifier are:
• Current noise density ini1of the INA, see Section 7.5
• Voltage noise denisty eni1 of the INA, see Section 7.5
• Voltage noise density caused by source resistance ini× Rin
• Resistor noise from source resistance enRin , given by: √Rin × 4.04 nV/√Hz
• Reference voltage noise enref
The noise sources are uncorrelated (that is, the noise signal is unpredictable). The result of mutliple uncorrelated
noise sources is the square root of the sum of their squares (RSS). Thus, the total RTI noise density, eni, in
nV/√Hz can be derived from the following equation:
eni=
¨e
ni1
2+en:Rin;2+(i
ni1ÂRin)
2+(
en:REF;
G1
)
2
(5)
www.ti.com
INA848
SBOS946 – SEPTEMBER 2020
Copyright © 2020 Texas Instruments Incorporated
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