| 전자부품 데이터시트 검색엔진 |
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RS3JB 데이터시트(PDF) 2 Page - Thinki Semiconductor Co., Ltd. |
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RS3JB 데이터시트(HTML) 2 Page - Thinki Semiconductor Co., Ltd. |
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2 / 2 page ![]() © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/2 Rev.10T RS3AB thru RS3MB Fig.3 Typical Instaneous Forward Characteristics 0.5 1.0 1.5 2.0 2.5 0.0 0.01 0.1 1.0 10 Instaneous Forward Voltage (V) T =25 J °C pulse with 300μs 1% duty cycle Fig.2 Typical Reverse Characteristics 0.1 1.0 10 100 20 40 60 80 100 120 00 140 percent of Rated Peak Voltage (%) Reverse T =125 J °C T =25 J °C 1.0 10 100 0.1 1 10 100 Reverse Voltage (V) T =25 J °C Fig.4 Typical Junction Capacitance T =25 J °C f = 1.0MHz Vsig = 50mVp-p 20 40 60 80 100 120 00 10 100 Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Number of Cycles 1 8.3 ms Single Half Sine Wave (JEDEC Method) 0.5 1.0 1.5 2.0 2.5 4.0 0.0 25 50 75 100 125 150 175 Case Temperature ( °C) Fig.1 Maximum Average Forward Current Rating 3.0 3.5 Single phase half-wave 60 Hz resistive or inductive load |
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