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STPSC10C065RY 데이터시트(PDF) 1 Page - STMicroelectronics |
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STPSC10C065RY 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 9 page ![]() NC(1) K(2) A(3) NC K A I2PAK K Features • AEC-Q101 qualified • No reverse recovery charge in application current range • Switching behavior independent of temperature • Recommended to PFC applications • PPAP capable • ECOPACK®2 compliant component Description The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, the STPSC10C065-Y will boost performance in hard switching conditions. Product status link STPSC10C065-Y Product summary IF(AV) 10 A VRRM 650 V Tj (max.) 175 °C Automotive 650 V power Schottky silicon carbide diode STPSC10C065-Y Datasheet DS12402 - Rev 2 - September 2018 For further information contact your local STMicroelectronics sales office. www.st.com |
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