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IXFN32N60 데이터시트(PDF) 2 Page - IXYS Corporation

부품명 IXFN32N60
상세설명  HiPerFET Power MOSFET
PDF  4 Pages
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제조업체  IXYS [IXYS Corporation]
홈페이지  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFN32N60 데이터시트(HTML) 2 Page - IXYS Corporation

  IXFN32N60 Datasheet HTML 1Page - IXYS Corporation IXFN32N60 Datasheet HTML 2Page - IXYS Corporation IXFN32N60 Datasheet HTML 3Page - IXYS Corporation IXFN32N60 Datasheet HTML 4Page - IXYS Corporation  
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IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFK 32N60
IXFN 32N60
IXFK 36N60
IXFN 36N60
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.82
5.13
.190
.202
A1
2.54
2.89
.100
.114
A2
2.00
2.10
.079
.083
b
1.12
1.42
.044
.056
b1
2.39
2.69
.094
.106
b2
2.90
3.09
.114
.122
c
0.53
0.83
.021
.033
D
25.91
26.16
1.020
1.030
E
19.81
19.96
.780
.786
e
5.46 BSC
.215 BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
4.32
.150
.170
R1
1.78
2.29
.070
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
Dim.
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
31.50
31.88
1.240
1.255
B
7.80
8.20
0.307
0.323
C
4.09
4.29
0.161
0.169
D
4.09
4.29
0.161
0.169
E
4.09
4.29
0.161
0.169
F
14.91
15.11
0.587
0.595
G
30.12
30.30
1.186
1.193
H
38.00
38.23
1.496
1.505
J
11.68
12.22
0.460
0.481
K
8.92
9.60
0.351
0.378
L
0.76
0.84
0.030
0.033
M
12.60
12.85
0.496
0.506
N
25.15
25.42
0.990
1.001
O
1.98
2.13
0.078
0.084
P
4.95
5.97
0.195
0.235
Q
26.54
26.90
1.045
1.059
R
3.94
4.42
0.155
0.174
S
4.72
4.85
0.186
0.191
T
24.59
25.07
0.968
0.987
U
-0.05
0.1
-0.002
0.004
TO-264 AA Outline
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D = 0.5 ID25, pulse test
36
S
C
iss
9000
pF
C
oss
V
GS
= 0 V, V
DS = 25 V, f = 1 MHz
840
pF
C
rss
280
pF
t
d(on)
30
ns
t
r
V
GS
= 10 V, V
DS = 0.5 VDSS, ID = 0.5 ID25
45
ns
t
d(off)
R
G = 1 Ω (External),
100
ns
t
f
60
ns
Q
g(on)
325
nC
Q
gs
V
GS
= 10 V, V
DS = 0.5 VDSS, ID = 0.5 ID25
60
nC
Q
gd
120
nC
R
thJC
TO-264 AA
0.25
K/W
R
thCK
TO-264 AA
0.15
K/W
R
thJC
miniBLOC, SOT-227 B
0.24
K/W
R
thCK
miniBLOC, SOT-227 B
0.05
K/W
Source-Drain Diode
Characteristic Values
(T
J = 25°C, unless otherwise specified)
Symbol
Test Conditions
Min.
Typ.
Max.
I
S
V
GS
= 0
36N60
36
A
I
S
V
GS
= 0
32N60
32
A
I
SM
Repetitive; pulse width limited by T
JM
36N60
144
A
32N60
128
A
V
SD
I
F = IS A, VGS = 0 V,
1.5
V
Pulse test, t
≤ 300 µs, duty cycle d ≤ 2 %
t
rr
250
ns
I
RM
20
A
I
F = IS, -di/dt = 100 A/µs, VR = 100 V



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