IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGH50N60A

IXGH50N60AS

V

0

5

10

15

20

25

0

500

1000

1500

2000

2500

3000

3500

4000

4500

C

ies

C

res

C

oes

V

0

100

200

300

400

500

600

700

0.01

0.1

1

10

100

T

dV/dt < 3V/ns

Total Gate Charge - (nC)

0

50

100

150

200

250

0

3

6

9

12

15

Pulse Width - seconds

0.00001

0.0001

0.001

0.01

0.1

1

10

0.001

0.01

0.1

1

D = Duty Cycle

Single Pulse

D=0.5

D=0.2

I

V

D=0.1

D=0.05

D=0.02

D=0.01

G50N60 2 JNB

Fig.10 Transient Thermal Impedance

Fig.9 Capacitance Curves

Fig.7 Gate Charge

Fig.8 Turn-Off Safe Operating Area