IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592 4,881,106

5,017,508

5,049,961 5,187,117 5,486,715

4,850,072 4,931,844

5,034,796

5,063,307 5,237,481 5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXSH 30N60

IXSM 30N60

IXSH 30N60A IXSM 30N60A

TO-247 AD Outline

Symbol

TestConditions

Characteristic Values

(T

min.

typ. max.

g

fs

I

C

= I

7

13

S

Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %

I

C(on)

V

100

A

C

ies

2760

pF

C

oes

V

240

pF

C

res

51

pF

Q

g

110

150 nC

Q

ge

I

34

45 nC

Q

gc

47

63 nC

t

d(on)

60

ns

t

ri

130

ns

t

d(off)

400

ns

t

fi

30N60

400

ns

30N60A

200

ns

E

off

30N60

5.0

mJ

30N60A

2.5

mJ

t

d(on)

60

ns

t

ri

130

ns

E

on

1.0

mJ

t

d(off)

30N60

540 1000 ns

30N60A

340

525 ns

t

fi

30N60

600 1500 ns

30N60A

340

700 ns

E

off

30N60

12

mJ

30N60A

6

mJ

R

thJC

0.63 K/W

R

thCK

0.25

K/W

IXSH 30N60 and IXSH 30N60A characteristic curves are located on the

IXSH 30N60U1 and IXSH 30N60AU1 data sheets.

TO-204AE Outline

1 = Gate

2 = Collector

3 = Emitter

Tab = Collector

1 = Gate

2 = Emitter

Case = Collector

Inductive load, T

I

V

Remarks: Switching times

may increase for

V

higher T

Inductive load, T

I

L = 100 µH

V

R

Remarks: Switching times

may increase for

V

higher T