PB210BD datasheet(2/5 Pages) UNIKC

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PB210BD

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

100

1.0

1.5

2.0

±100

203

240

191

230

802

1002

100

2.5

3.1

330

111

1.4

0.17

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

STATIC

mΩ

TEST CONDITIONS

VDD = 50V,

ID@ 6A, VGS = 10V, RGEN = 6Ω

td(on)

td(off)

Fall Time

Forward Voltage

Continuous Current

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

LIMITS

UNIT

Gate Threshold Voltage

Gate-Drain Charge

Gate-Source Charge

Reverse Transfer Capacitance

VGS = 0V, VDS = 25V, f = 1MHz

VSD

Total Gate Charge

IF = 6A, VGS = 0V

Input Capacitance

Output Capacitance

Gate Resistance

ID(ON)

VDS = 10V, VGS = 10V

Drain-Source On-State

Resistance

RDS(ON)

VGS = 10V, ID = 6A

DYNAMIC

Ciss

Coss

VDS = 50V, VGS = 10V,

ID = 6A

Qgd

Qgs

Crss

VGS = 0V, VDS = 0V, f = 1MHZ

Drain-Source Breakdown Voltage

VGS = 5V, ID = 6A

VDS = 10V, ID = 6A

VGS(th)

Forward Transconductance

VGS = 0V, ID = 250mA

V(BR)DSS

Zero Gate Voltage Drain Current

Gate-Body Leakage

On-State Drain Current

IGSS

IDSS

gfs

VDS = 80V, VGS = 0V

VDS = 80V, VGS = 0V , TJ = 125 °C

VDS = VGS, ID = 250mA

VDS = 0V, VGS = ±20V

PARAMETER

SYMBOL

Reverse Recovery Time

Reverse Recovery Charge

trr

IF = 6A, dl/dt = 500A /

Qrr

Rev 1.2

2014/5/23

PB210BD 데이터시트(PDF) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

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