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AOB409L 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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AOB409L 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc P-Channel MOSFET Transistor AOB409L · FEATURES · Drain Current –ID= -31.5A@ TC=25℃ · Drain Source Voltage- : VDSS= -60V(Min) · Static Drain-Source On-Resistance : RDS(on) = 38mΩ(Max) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · DESCRITION · Be suitable for synchronous rectification for server and general purpose applications · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -60 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous -31.5 A IDM Drain Current-Single Pulsed -85 A PD Total Dissipation @TC=25℃ 83.3 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 1.8 ℃ /W |
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