MMSF4P01HDR2G datasheet(2/6 Pages) VBSEMI

2 / 6 page

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C unless otherwise noted

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = - 600 µA

- 0.5

1.0

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 8 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = - 12 V, VGS = 0 V

- 1

µA

VDS = - 12 V, VGS = 0 V, TJ = 70 °C

- 10

On-State Drain Currenta

ID(on)

VDS = - 5 V, VGS = - 4.5 V

- 30

Drain-Source On-State Resistancea

RDS(on)

VGS = - 4.5 V, ID = - 14 A

0.0050

VGS = - 2.5 V, ID = - 13 A

0.0065

VGS = - 1.8 V, ID = - 12 A

0.0100

Forward Transconductancea

gfs

VDS = - 6 V, ID = - 14 A

Diode Forward Voltagea

VSD

IS = - 2.7 A, VGS = 0 V

- 0.6

- 1.1

Dynamicb

Total Gate Charge

VDS = - 6 V, VGS = - 5 V, ID = - 14 A

110

165

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

27.5

Turn-On Delay Time

td(on)

VDD = - 6 V, RL = 6 Ω

ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω

110

170

Rise Time

235

350

Turn-Off Delay Time

td(off)

410

620

Fall Time

285

430

Gate Resistance

3.6

Source-Drain Reverse Recovery Time

trr

IF = - 2.1 A, dI/dt = 100 A/µs

180

270

Output Characteristics

1234

VGS = 5 thru 2 V

VDS - Drain-to-Source Voltage (V)

1.5 V

Transfer Characteristics

0.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

TC = 125 °C

- 55 °C

25 °C

VGS - Gate-to-Source Voltage (V)

MMSF4P01HDR2G

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