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MTP23P06VG 데이터시트(PDF) 1 Page - VBsemi Electronics Co.,Ltd

부품명 MTP23P06VG
상세설명  P-Channel 60-V (D-S) MOSFET
PDF  7 Pages
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제조업체  VBSEMI [VBsemi Electronics Co.,Ltd]
홈페이지  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

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PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
Qg (Typ)
- 60
0.062 at V GS = - 10 V
- 20
12.5
0.074 at VGS = - 4.5 V
- 15
S
G
D
P-Channel MOSFET
Notes:
a. See SOA curve for voltage derating.
b. Surface Mounted on 1" x 1" FR-4 boad.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
VGS
± 20
V
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
ID
- 20
A
TC = 100 °C
- 12
Pulsed Drain Current
IDM
- 60
Continuing Source Current (Diode Conduction)
IS
- 12
Avalanche Current
IAS
- 12
Single Pulse Avalanche Energy
L = 0.1 mH
EAS
7.2
mJ
Maximum Power Dissipation
TC = 25 °C
PD
60a
W
TA = 25 °C
2b
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Junction-to-Ambientb
t
≤ 10 sec
RthJA
20
25
°C/W
Steady State
62
75
Junction-to-Case
RthJC
56
P-Channel 60-V (D-S) MOSFET
FEATURES
•
TrenchFET® Power MOSFET
•
100 % UIS Tested
APPLICATIONS
• Load Switch
TO-220AB
Top View
GD S
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
MTP23P06VG
1


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