DS30673 Rev. 1 - 5

1 of 3

DMN600V

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DMN600V

DUAL N-CHANNEL ENHANCEMENT

MODE FIELD EFFECT TRANSISTOR

Features

·

Dual N-Channel MOSFET

·

Low On-Resistance

·

Low Gate Threshold Voltage

·

Low Input Capacitance

·

Fast Switching Speed

·

Low Input/Output Leakage

·

Ultra-Small Surface Mount Package

·

Lead Free By Design/RoHS Compliant (Note 3)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

60

V

60

V

Gate-Source Voltage (Note 3)

Continuous

Pulsed

±20

±40

V

Drain Current (Note 3)

Continuous

280

mA

Drain Current (Note 3)

Pulsed

1.5

A

Total Power Dissipation

150

mW

Thermal Resistance, Junction to Ambient

833

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

A

M

L

B C

H

K

G

D

Mechanical Data

S

1

D

1

D

2

S

2

G

1

G

2

·

Case: SOT-563

·

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

·

Moisture Sensitivity: Level 1 per J-STD-020C

·

Terminals Connections: See Diagram

·

Terminals: Finish - Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

·

Terminals: Lead bearing terminal plating available. See

Ordering information Page 2, Note 6

·

Marking: See Page 2

·

Ordering & Date Code Information: See Page 2

·

Weight: 0.006 grams (approximate)

SOT-563

Dim

Min

Max

Typ

A

0.15

0.30

0.25

B

1.10

1.25

1.20

C

1.55

1.70

1.60

D

0.50

G

0.90

1.10

1.00

H

1.50

1.70

1.60

K

0.56

0.60

0.60

L

0.10

0.30

0.20

M

0.10

0.18

0.11

All Dimensions in mm

Notes:

1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).

2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

3. No purposefully added Lead.

SEE NOTE 1