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AF4928NS 데이터시트(PDF) 2 Page - Anachip Corp

부품명 AF4928NS
상세설명  N-Channel Enhancement Mode Power MOSFET
PDF  5 Pages
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제조업체  ANACHIP [Anachip Corp]
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AF4928NS 데이터시트(HTML) 2 Page - Anachip Corp

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AF4928N
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Oct 13, 2005
2/5
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
TA=25ºC
6.8
ID
Continuous Drain Current (Note 1)
TA=70ºC
5.5
A
IDM
Pulsed Drain Current (Note 2)
40
A
Total Power Dissipation
2
W
PD
Linear Derating Factor
TA=25ºC
0.016
W/ºC
TSTG
Storage Temperature Range
-55 to 150
ºC
TJ
Operating Junction Temperature Range
-55 to 150
ºC
Thermal Data
Symbol
Parameter
Maximum
Units
Rthj-amb
Thermal Resistance Junction-ambient (Note 1)
Max.
62.5
ºC/W
Electrical Characteristics at T
J=25ºC unless otherwise specified
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
30
-
-
V
∆BVDSS / ∆TJ
Breakdown Voltage Temperature
Coefficient
Reference to 25
oC,
ID=1mA
-
0.03
-
V/
oC
VGS=10V, ID=6A
-
-
26
RDS(ON)
Static Drain-Source
On-Resistance (Note 3)
VGS=4.5V, ID=4A
-
-
40
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=6A
-
15
-
S
Drain-Source Leakage Current
(TJ=25
oC)
VDS=30V, VGS=0V
-
-
1
IDSS
Drain-Source Leakage Current
(TJ=70
oC)
VDS=24V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
Qg
Total Gate Charge (Note 3)
-
9
15
Qgs
Gate-Source Charge
-
2
-
Qgd
Gate-Drain (“Miller”) Charge
ID=6.8A,
VDS=24V,
VGS=4.5V
-
6
-
nC
td(on)
Turn-On Delay Time (Note 3)
-
10
-
tr
Rise Time
-
9
-
td(off)
Turn-Off Delay Time
-
18
-
tf
Fall-Time
VDS=15V,
ID=1A,
RG=3.3Ω, VGS=10V
RD=15Ω
-
6
-
ns
Ciss
Input Capacitance
-
580
930
Coss
Output Capacitance
-
150
-
Crss
Reverse Transfer Capacitance
VGS=0V,
VDS=25V,
f=1.0MHz
-
108
-
pF
RG
Gate Resistance
f=1.0MHz
-
0.9
-
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VSD
Forward On Voltage (Note 3)
IS=1.7A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time (Note 3)
-
15
-
ns
Qrr
Reverse Recovery Charge
IS=6.8A, VGS=0V,
dl/dt=100A/µs
-
9
-
nC
Note 1: Surface mounted on 1 in
2 copper pad of FR4 board; 135oC/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%.



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