FTK1012 datasheet(2/6 Pages) FS

2 / 6 page

2014. 01. 13

2/6

Revision No : 0

FTK1012

SPECIFICATIONS (TA = 25℃ UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate ThresholdVoltage

VGS(th)

VDS = VGS, ID= 250 A

0.45

0.9

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = 4.5 V

0.5

1.0

Zero

age Drain Current

IDSS

VDS = 20 V, VGS = 0 V

0.3

100

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V, TJ = 85 C

On-State Drain Current

ID(on)

VDS = 5 V, VGS = 4.5 V

700

VGS = 4.5 V, ID= 600 mA

0.41

0.70

Drain-Source On-State Resistance

rDS(on)

VGS = 2.5 V, ID= 500 m A

0.53

0.85

DS(on)

VGS = 1.8 V, ID= 350 m A

0.70

1.25

Forward Transconductance

gfs

VDS = 10 V, ID = 400 mA

1.0

Diode ForwardVoltage

VSD

IS = 150 mA, VGS= 0 V

0.8

1.2

Dynamicb

Total Gate Charge

750

Gate-Source Charge

Qgs

VDS = 10 V, VGS = 4.5 V, ID= 250 mA

Gate-Drain Charge

Qgd

225

Turn-On Delay Time

td(on)

Rise Time

VDD = 10 V, R L= 47

Turn-Off Delay Time

td(off)

VDD = 10 V,

200 mA, VGEN = 4.5 V, RG = 10

Fall Time

Notes

Pulse test; pulse width 300 s, duty cycle

2%.

Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

FTK1012 데이터시트(PDF) 2 Page - First Silicon Co., Ltd

FTK1012 데이터시트(HTML) 2 Page - First Silicon Co., Ltd

Html Pages

1 2 3 4 5 6

데이터시트 다운로드

링크 URL