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P0804BVG 데이터시트(PDF) 3 Page - VBsemi Electronics Co.,Ltd

부품명 P0804BVG
상세설명  N-Channel 40-V (D-S) MOSFET
PDF  9 Pages
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제조업체  VBSEMI [VBsemi Electronics Co.,Ltd]
홈페이지  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

P0804BVG 데이터시트(HTML) 3 Page - VBsemi Electronics Co.,Ltd

  P0804BVG Datasheet HTML 1Page - VBsemi Electronics Co.,Ltd P0804BVG Datasheet HTML 2Page - VBsemi Electronics Co.,Ltd P0804BVG Datasheet HTML 3Page - VBsemi Electronics Co.,Ltd P0804BVG Datasheet HTML 4Page - VBsemi Electronics Co.,Ltd P0804BVG Datasheet HTML 5Page - VBsemi Electronics Co.,Ltd P0804BVG Datasheet HTML 6Page - VBsemi Electronics Co.,Ltd P0804BVG Datasheet HTML 7Page - VBsemi Electronics Co.,Ltd P0804BVG Datasheet HTML 8Page - VBsemi Electronics Co.,Ltd P0804BVG Datasheet HTML 9Page - VBsemi Electronics Co.,Ltd  
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
10
20
30
40
50
0
0.4
0.8
1.2
1.6
2.0
VDS - Drain-to-Source Voltage (V)
VGS = 10 V thru 5 V
4 V
3 V
0.004
0.009
0.014
0.019
0.024
0
10203040
50
ID - Drain Current (A)
VGS = 4.5 V
VGS = 10 V
0
2
4
6
8
10
0
5
10
15
20
25
30
35
VDS = 20 V
ID = 12.4 A
Qg - Total Gate Charge (nC)
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
VGS - Gate-to-Source Voltage (V)
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
TC = 125 °C
TC = 25 °C
TC = - 55 °C
0
400
800
1200
1600
2000
2400
0
5
10
15
20
25
30
35
40
Coss
Ciss
VDS - Drain-to-Source Voltage (V)
Crss
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50
- 25
0
25
50
75
100
125
150
VGS = 10 V
ID = 12.4 A
TJ - Junction Temperature (°C)
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
P0804BVG
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