Publication Order Number:

1N459/A /D

©2004

Semiconductor Components Industries, LLC.

October-2017,Rev.1

1N459/A

Small Signal Diode

* These ratings are limiting values above which the serviceability of the diode may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 200 degrees C.

2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Symbol

Parameter

Value

Unit

Maximum Repetitive Reverse Voltage

200

V

Average Rectified Forward Current

500

mA

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second

Pulse Width = 1.0 microsecond

1.0

4.0

A

A

Storage Temperature Range

-65 to +200

°C

Operating Junction Temperature

175

°C

Symbol

Parameter

Value

Unit

Power Dissipation

500

mW

Thermal Resistance, Junction to Ambient

300

°C/W

Symbol

Parameter

Conditions

Min.

Max

Units

Breakdown Voltage

200

V

Forward Voltage

1N459A

1.0

1.0

V

V

Reverse Leakage

1N459

1N459A

25

5

nA

µA

Total Capacitance

6.0

pF

DO-35

Color Band Denotes Cathode