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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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AFGY100T65SPD 데이터시트(PDF) 2 Page - ON Semiconductor |
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AFGY100T65SPD 데이터시트(HTML) 2 Page - ON Semiconductor |
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2 / 9 page  AFGY100T65SPD www.onsemi.com 2 THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junction−to−case, for IGBT RqJC 0.23 °C/W Thermal resistance junction−to−case, for Diode RqJC 0.40 Thermal resistance junction−to−ambient RqJA 40 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Test Conditions Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−emitter breakdown voltage, gate−emitter short−circuited VGE = 0 V, IC = 1 mA BVCES 650 − − V Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 1 mA DBVCES DTJ − 0.6 − V/°C Collector−emitter cut−off current, gate−emitter short−circuited VGE = 0 V, VCE = 650 V ICES − − 40 mA Gate leakage current, collector− emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − ±250 nA ON CHARACTERISTICS Gate−emitter threshold voltage VGE = VCE, IC = 100 mA VGE(th) 4.3 5.3 6.3 V Collector−emitter saturation voltage VGE = 15 V, IC = 100 A VGE = 15 V, IC = 100 A, TJ = 175°C VCE(sat) − − 1.6 2.15 2.05 − V DYNAMIC CHARACTERISTICS Input capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz Cies − 4220 − pF Output capacitance Coes − 302 − Reverse transfer capacitance Cres − 38 − Internal Gate Resistance f = 1 MHz RG − 3 − W Gate charge total VCE = 400 V, IC = 100 A, VGE = 15 V Qg − 109 164 nC Gate−to−emitter charge Qge − 34 − Gate−to−collector charge Qgc − 36 − SWITCHING CHARACTERISTICS, INDUCTIVE LOAD Turn−on delay time TJ = 25°C, VCC = 400 V, IC = 100 A, RG = 5.0 W, VGE = 15 V, Inductive Load td(on) − 36 − ns Rise time tr − 92 − Turn−off delay time td(off) − 78 − Fall time tf − 106 − Turn−on switching loss Eon − 5.1 − mJ Turn−off switching loss Eoff − 2.7 − Total switching loss Ets − 7.8 − Turn−on delay time TJ = 175°C, VCC = 400 V, IC = 100 A, RG = 5.0 W, VGE = 15 V, Inductive Load td(on) − 32 − ns Rise time tr − 96 − Turn−off delay time td(off) − 84 − Fall time tf − 156 − Turn−on switching loss Eon − 7.9 − mJ Turn−off switching loss Eoff − 4.0 − Total switching loss Ets − 11.9 − |
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