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PSMN013-100PS 데이터시트(PDF) 4 Page - VBsemi Electronics Co.,Ltd |
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PSMN013-100PS 데이터시트(HTML) 4 Page - VBsemi Electronics Co.,Ltd |
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4 / 7 page ![]() TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Junction Temperature Avalanche Current vs. Time 0.0 0.5 1.0 1.5 2.0 2.5 3.0 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) VGS = 10 V ID = 30 A tin (s) 1000 10 0.00001 0.001 0.1 1 0.1 0.01 IAV (A) at TA = 150 °C 100 1 0.0001 IAV (A) at TA = 25 °C Source-Drain Diode Forward Voltage Drain Source Breakdown vs. Junction Temperature VSD - Source-to-Drain Voltage (V) 100 10 1 0.3 0.6 0.9 1.2 TJ = 25 °C TJ = 150 °C 0 180 190 200 210 220 230 240 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) ID = 1.0 mA E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw PSMN013-100PS 4 |
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