ISCN252I datasheet(1/2 Pages) ISC

부품명	ISCN252I

상세설명	isc Silicon NPN Power Transistor

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제조업체	ISC [Inchange Semiconductor Company Limited]

홈페이지	http://www.iscsemi.cn

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isc Silicon NPN Power Transistor

ISCN252I

DESCRIPTION

·

High Collector Current-IC= 3.0A

·

Low Saturation Voltage -

: VCE(sat)= 0.5V(Max)@ IC= 2.0A, IB= 0.2A

·

Good Linearity of hFE

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Suited for the output stage of 3 watts audio amplifier,

voltage regulator, DC-DC converter and relay driver.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

3.0

A

ICP

Collector Current-Pulse

7.0

A

PC

Collector Power Dissipation

@ Ta=25℃

1.0

W

Collector Power Dissipation

@ TC=25℃

10

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

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