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8SF3P6TR 데이터시트(PDF) 86 Page - STMicroelectronics

부품명 8SF3P6TR
상세설명  Value line, 16-MHz STM8S 8-bit MCU, 8-Kbyte Flash memory, 128-byte data EEPROM, 10-bit ADC, 3 timers, UART, SPI, I²C
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Electrical characteristics
STM8S003F3 STM8S003K3
86/103
DS7147 Rev 10
Electromagnetic interference (EMI)
Based on a simple application running on the product (toggling two LEDs through the I/O
ports), the product is monitored in terms of emission. Emission tests conform to the IEC
61967-2 standard for test software, board layout and pin loading.
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, DLU and LU) using specific measurement methods,
the product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to the application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (one positive then one negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). One model
can be simulated: the Human Body Model (HBM). This test conforms to the JESD22-
A114A/A115A standard. For more details, refer to the application note AN1181.
Table 49. EMI data
Symbol
Parameter
Conditions
Unit
General conditions
Monitored
frequency band
Max fHSE/fCPU(1)
1. Data based on characterization results.
16 MHz/
8 MHz
16 MHz/
16 MHz
SEMI
Peak level
VDD = 5 V
TA = 25 °C
LQFP32 package
conforming to IEC
61967-2
0.1 MHz to 30 MHz
5
5
dBµV
30 MHz to 130 MHz
4
5
130 MHz to 1 GHz
5
5
EMI level
-
2.5
2.5
-
Table 50. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class
Maximum
value(1)
1. Data based on characterization results.
Unit
VESD(HBM)
Electrostatic discharge voltage
(Human body model)
TA = 25°C, conforming to
JESD22-A114
A
4000
V
VESD(CDM)
Electrostatic discharge voltage
(Charge device model)
TA= 25°C, conforming to
JESD22-C101
IV
1000
V



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