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STM32H747AI 데이터시트(PDF) 228 Page - STMicroelectronics |
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STM32H747AI 데이터시트(HTML) 228 Page - STMicroelectronics |
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228 / 252 page ![]() Electrical characteristics STM32H747xI/G 218/242 DS12930 Rev 1 Ethernet interface characteristics Unless otherwise specified, the parameters given in Table 126, Table 127 and Table 128 for SMI, RMII and MII are derived from tests performed under the ambient temperature, frcc_c_ck frequency and VDD supply voltage conditions summarized in Table 22: General operating conditions, with the following configuration: • Output speed is set to OSPEEDRy[1:0] = 10 • Capacitive load CL=20 pF • Measurement points are done at CMOS levels: 0.5VDD • IO Compensation cell activated. • HSLV activated when VDD ≤ 2.7 V • VOS level set to VOS1 Refer to Section 6.3.18: I/O port characteristics for more details on the input/output characteristics: Figure 67. Ethernet SMI timing diagram Table 126. Dynamics characteristics: Ethernet MAC signals for SMI (1) 1. Guaranteed by characterization results. Symbol Parameter Min Typ Max Unit tMDC MDC cycle time( 2.5 MHz) 400 400 403 ns Td(MDIO) Write data valid time 0.5 1.5 4 tsu(MDIO) Read data setup time 12.5 - - th(MDIO) Read data hold time 0 - - MS31384V1 ETH_MDC ETH_MDIO(O) ETH_MDIO(I) tMDC td(MDIO) tsu(MDIO) th(MDIO) |
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