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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRFHM9331 데이터시트(PDF) 2 Page - Infineon Technologies AG |
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IRFHM9331 데이터시트(HTML) 2 Page - Infineon Technologies AG |
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2 / 8 page  2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 16, 2013 IRFHM9331PbF Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.904mH, RG = 50Ω, IAS = -9A. Pulse width ≤ 400μs; duty cycle ≤ 2%. When mounted on 1 inch square copper board.
Rθ is measured at TJ of approximately 90°C. For DESIGN AID ONLY, not subject to production testing. Current limited by package. . G D S Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage -30 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C RDS(on) ––– 10.0 ––– ––– 11.7 14.6 VGS(th) Gate Threshold Voltage -1.3 -1.8 -2.4 V ΔVGS(th) Gate Threshold Voltage Coefficient ––– -5.1 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– -1.0 ––– ––– -150 IGSS Gate-to-Source Forward Leakage ––– ––– -10 Gate-to-Source Reverse Leakage ––– ––– 10 gfs Forward Transconductance 16 ––– ––– S Qg Total Gate Charge h ––– 16 ––– nC VDS = -15V,VGS = -4.5V,ID = - 9.0A Qg Total Gate Charge h ––– 32 48 Qgs Gate-to-Source Charge h ––– 4.4 ––– Qgd Gate-to-Drain Charge h –––8––– RG Gate Resistance h ––– 16 ––– Ω td(on) Turn-On Delay Time ––– 11 ––– tr Rise Time ––– 27 ––– td(off) Turn-Off Delay Time ––– 72 ––– tf Fall Time ––– 60 ––– Ciss Input Capacitance ––– 1543 ––– Coss Output Capacitance ––– 310 ––– Crss Reverse Transfer Capacitance ––– 208 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) Ã VSD Diode Forward Voltage ––– ––– -1.2 V trr Reverse Recovery Time ––– 64 96 ns Qrr Reverse Recovery Charge ––– 25 38 nC Thermal Resistance Parameter Units RθJC Junction-to-Case g RθJA Junction-to-Ambient f RθJA Junction-to-Ambient (t<10s) f °C/W Conditions See Figs. 19a & 19b Max. 76 -9.0 ƒ = 1.0KHz VGS = 0V VDS = -25V VDS = -24V, VGS = 0V Conditions VGS = 0V, ID = -250μA Reference to 25°C, ID = -1mA VGS = -20V, ID = -11A e VGS = -10V, ID = -11A e VDS = VGS, ID = -25μA m Ω μA TJ = 25°C, IF = -2.8A, VDD = -24V di/dt = 100/μs e TJ = 25°C, IS = -2.8A, VGS = 0V e showing the integral reverse p-n junction diode. MOSFET symbol ID = -9.0A RG = 6.8 Ω VDS = -10V, ID = -9.0A VDS = -24V, VGS = 0V, TJ = 125°C VDD = -15V, VGS = -4.5V e ID = -1.0A VDS = -15V VGS = -25V VGS = 25V VGS = -10V -90 μA nC ns pF ––– Typ. ––– Typ. ––– ––– Static Drain-to-Source On-Resistance A ––– ––– ––– ––– -2.8 Max. 6 30 45 |
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