STM32WL55JC datasheet(107/145 Pages) STMICROELECTRONICS

107 / 145 page

DS13293 Rev 1

107/145

STM32WL55/54xx

Electrical characteristics

135

5.3.13

EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling two LEDs through I/O ports).

the device is stressed by the following electromagnetic events until a failure occurs (failure

indicated by the LEDs):

•

ESD (electrostatic discharge, positive and negative) applied to all device pins until a

functional disturbance occurs (test compliant with IEC 61000-4-2 standard)

•

FTB (burst of fast transient voltage, positive and negative) applied to VDD and VSS

pins, through a 100 pF capacitor, until a functional disturbance occurs (test compliant

with IEC 61000-4-4 standard)

A device reset allows normal operations to be resumed.

The test results given in the table below, are based on the EMS levels and classes defined

in application note EMC design guide for STM8, STM32 and Legacy MCUs (AN1709).

IDD

Average consumption from VDD

Write mode

3.4

Erase mode

3.4

Maximum current (peak)

Write mode

7 (for 6 µs)

Erase mode

7 (for 67 µs)

1. Guaranteed by design.

Table 68. Flash memory characteristics(1) (continued)

Symbol

Parameter

Conditions

Typ

Max

Unit

Table 69. Flash memory endurance and data retention

Symbol

Parameter

Conditions

Min(1)

Unit

NEND

Endurance

TA = -40 to +105 °C

kcycles

tRET

Data retention

1 kcycle(2) at TA = 85 °C

Years

1 kcycle(2) at TA = 105 °C

10 kcycles(2) at TA = 55 °C

10 kcycles(2) at TA = 85 °C

10 kcycles(2) at TA = 105 °C

1. Guaranteed by characterization results.

2. Cycling performed over the whole temperature range.

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