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2SC3356KB 데이터시트(PDF) 1 Page - SHIKUES Electronics |
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2SC3356KB 데이터시트(HTML) 1 Page - SHIKUES Electronics |
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1 / 3 page ![]() NPN · U · S · H · hi · S · hi Fea High Low fT (T Abs Coll Coll Emi Coll Coll Junc Stor hFE Cla M N SILICON Ultra high fre ilicon epitax High power g igh dynamic C-59 chip p igh frequenc ature h gain:︱S21 w noise: NF TYP.) : solute Max PAR lector-base b lector-emitte itter-base bre lector curren lector Power ction Temper rage Tempera E Classifica assification Marking hFE N RF TRA equency low xial bipolar p gain, low no c range and package, mai cy wideband 1 e︱2 TYP. TYP. TYP imum Rati RAMETER breakdown vo er breakdown eakdown volt nt r Dissipation rature ature ation (@VC B R 90- ANSISTOR w noise trans process. oise figure, ideal curren inly used in d low noise a Value is 11d . Value is 1.5 P. Value is 7G ings TA=25℃ oltage n voltage tage CE=10V,IC B R24 -140 sistor nt characteris VHF, UHF amplifier. dB @ V 5dB @ V GHz @ V ℃ Unless Otherw SYMBLE VCBO VCEO VEBO IC PD Tj Tstg C=20mA) C 130-1 stics, and CATV VCE=10V, VCE=10V, VCE=10V, wise noted E MAXIM -65 R25 180 1:Ba IC=20mA, IC=7mA, IC=20mA, MUM VALU 20 12 3 100 200 150 ~ +150 ℃ D 170-25 3 1 SC ase 2:Em f=1GHz f=1GHz f=1GHz E U m m T 0 2 C-59 mitter 3:C UNIT V V V mA mW ℃ Tstg Collector 2SC3356K 1 of 3 REV.08 |
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