2017. 10. 10

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SEMICONDUCTOR

TECHNICAL DATA

IRF540F

Revision No : 0

N-Channel Power MOSFET (100V/27A)

GENERAL DESCRIPTION

It uses advanced trench technology and design to provide

This device is suitable for high current load applications.

FEATURE

High current rating

Excellent package for good heat dissipation

APPLICATION

Power switching application

Load switching in high circuit application

DC/DC converters

℃ unless otherwise noted)

t

i

n

U

Value

Sumbol

PARAMETER

V

e

g

a

t

l

o

V

e

c

r

u

o

S

-

n

i

a

r

D

DS

100

V

e

g

a

t

l

o

V

e

c

r

u

o

S

-

e

t

a

G

GS

±20

V

Continuous Drain Current

27

I

t

n

e

r

r

u

C

n

i

a

r

D

d

e

s

l

u

P

DM

50

A

E

)

1

e

t

o

n

(

y

g

r

e

n

E

e

h

c

n

a

l

a

v

A

d

e

s

l

u

P

e

l

g

n

i

S

AS

250

mJ

Thermal Resistance from Junction to Ambient

θJA

62.5

℃/W

T

e

r

u

t

a

r

e

p

m

e

T

n

o

i

t

c

n

u

J

J

150

T

ge

n

a

R

e

r

u

t

a

r

e

p

m

e

T

e

g

a

r

o

t

S

STG

-55 ~+150

Maximum lead temperure for soldering purposes ,

1/8”from case for 5 seconds

260

℃

R

TO-220F

A

A

B

C

C

D

D

E

E

F

G

H

H

1.52 MAX

1.52 MAX

J

K

L

M

L

N

N

N

O

Q

R

R

1

2

3

M

DIM

MILLIMETERS

10.16

0.20

+

_

15.00

0.20

+

_

3.00

0.20

+

_

0.625±0.125

3.50 typ

0.45

0.1

+

_

3.80

0.2

+

_

13.20

0.20

+

_

2.54

0.2

+

_

4.50

0.2

+

_

6.36

0.3

+

_

2.70

0.20

+

_

2.7 typ

16.80

0.4

+

_

1. GATE

2. DRAIN

3. SOURCE