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FTK2501DFN22 데이터시트(PDF) 2 Page - First Silicon Co., Ltd

부품명 FTK2501DFN22
상세설명  20V P-Channel Enhancement-Mode MOSFET
PDF  5 Pages
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제조업체  FS [First Silicon Co., Ltd]
홈페이지  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK2501DFN22 데이터시트(HTML) 2 Page - First Silicon Co., Ltd

  FTK2501DFN22 Datasheet HTML 1Page - First Silicon Co., Ltd FTK2501DFN22 Datasheet HTML 2Page - First Silicon Co., Ltd FTK2501DFN22 Datasheet HTML 3Page - First Silicon Co., Ltd FTK2501DFN22 Datasheet HTML 4Page - First Silicon Co., Ltd FTK2501DFN22 Datasheet HTML 5Page - First Silicon Co., Ltd  
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2017. 3. 18
2/5
Revision No : 0
FTK2501DFN2020
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Limit
Min Typ
Max
Unit
STATIC
V(BR)DSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250μ A
-20
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250μ A
-0.4
-0.6
-1
V
IGSS
Gate Leakage Current
VDS=0V, VGS=±8V
±100
nA
IDSS
Zero Gate Voltage Drain Current
VDS=-20V, VGS=0V
-1
μ
A
VGS=-4.5V, ID= -2.8A
90
110
RDS(ON)
Drain-Source On-Resistance a
VGS=-2.5V, ID= -2.0A
110
150
mΩ
VSD
Diode Forward Voltage
IS=-1A, VGS=0V
-0.7
-1.4
V
DYNAMIC
Qg
Total Gate Charge
7.2
Qgs
Gate-Source Charge
2.2
Qgd
Gate-Drain Charge
VDS=-6V, VGS=-4.5V,
ID=-2.8A
1.2
nC
Rg
Gate resistance
VDS=0V, VGS=0V, f=1MHz
7.5
Ω
Ciss
Input Capacitance
480
Coss
Output Capacitance
46
Crss
Reverse Transfer Capacitance
VDS=-15V, VGS=0V,
f=1MHz
10
pF
td(on)
Turn-On Delay Time
50
tr
Turn-On Rise Time
30
td(off)
Turn-Off Delay Time
40
tf
Turn-Off Fall time
VDS=-6V, RL =6Ω
RGEN=6Ω , VGS=-4.5V
11
ns
Notes: a. Pulse test; pulse width ≤ 300us, duty cycle ≤ 2%



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