| 전자부품 데이터시트 검색엔진 |
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2SB779 데이터시트(PDF) 2 Page - Panasonic Semiconductor |
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2SB779 데이터시트(HTML) 2 Page - Panasonic Semiconductor |
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2 / 2 page ![]() 2 Transistor 2SB779 0 160 40 120 80 140 20 100 60 0 240 200 160 120 80 40 Ambient temperature Ta (˚C) – 0.01 – 0.1 –1 –10 – 0.03 – 0.3 –3 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 –30 –100 I C/IB=10 –25˚C Ta=75˚C 25˚C Collector current I C (A) – 0.01 – 0.1 –1 –10 – 0.03 – 0.3 –3 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 –30 –100 I C/IB=10 Ta=–25˚C 75˚C 25˚C Collector current I C (A) – 0.01 – 0.1 –1 –10 – 0.03 – 0.3 –3 0 600 500 400 300 200 100 V CE=–2V Ta=75˚C 25˚C –25˚C Collector current I C (A) 0.1 1 10 100 0.3 3 30 0 400 320 240 160 80 360 280 200 120 40 V CB=–10V Ta=25˚C Emitter current I E (mA) –1 –3 –10 –30 –100 0 60 50 40 30 20 10 I E=0 f=1MHz Ta=25˚C Collector to base voltage V CB (V) PC — Ta VCE(sat) — IC VBE(sat) — IC hFE — IC fT — IE Cob — VCB |
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